o Image sensor silicon bring-up, characterization, performance and IQ evaluation using MATLAB
and Python
o Developing smallest size HDR global shutter pixel for AR/VR application. Key responsibilities include sensor KPI benchmarking to product/pixel design, layout and TCAD simulation and engaging with fab for mass production. Characterization, WAT and yield data analysis using Pyhton/Pandas.
o Engaged in ams-OSRAM dTOF development for 10 um SPAD in TSMC 45nm/22nm stacked CMOS process.
o Expect in TCAD simulation for CMOS image sensor and SPAD.

o Evaluate pixel size versus performance and cost for various market segment need. Use
Matlab/Python to calculate SNR and other performance.
o Designed and lead 2.1 um single exposure 115 dB DR automotive pixel from concept to layout
and TCAD. Worked with external foundry to manufacture silicon and finally characterize and
image quality investigation.
o Designed 2 um ultra-low light sensitive pixel with SNR1 of 0.45 lux for security application
o Designed 1.4 um pixel with high FWC and low dark current for low power IoT application
o Designed process for 1 um pixel with Sentaurus TCAD using TSMC 45nm process.
o Optimize process for 2.75um GS, 2.2um BSI GS pixel
o Calibrated Sentaurus process and device to match TSMC45 CIS process.
o Primary responsibility includes design, TCAD simulation, layout and coordinating projects with
external foundries. Secondary responsibility is to work and guide characterization engineer to
optimize setting to achieve desired pixel performance.

Design and simulation of 14nm FinFET, 22nm FDSOI transistor architecture. Responsibility includes building TCAD deck, process and device simulation to improve performance of logic/SRAM FET, 22 FDSOI RF transistor design and performance evaluation, threshold voltage mismatch reduction through simulation, layout based Ring Oscillator performance optimization.

Logic/SRAM device characterization and performance evaluation on 32nm node

Simulating Avalanche Photodiode for PET devices
Summer Intern, IMEC Belgium in 2010.Performing simulation of CMOS image sensor in TCAD
Sentaurus process and device.
Patents: 3 issued, 2 pending
Publication:
• 8.3 MP CMOS Image Sensor with 150 dB Dynamic Range and Light Flicker Mitigation (Invited),
M. Innocent, S. Velichko, D. Lloyd, J. Beck, A. Hernandez, B. Vanhoff, C. Silsby, A. Oberoi, G.
Singh, S. Gurindagunta, R. Mahadevappa, M. Suryadevara, M. Rahman, and V. Korobov
• 2. Pixel with nested photo diodes and 120 dB single exposure dynamic range. Manuel Innocent,
Angel Rodriguez, Deb Guruaribam, Muhammad Rahman, Marc Sulfridge, Swarnal Borthakur,
Bob Gravelle, Takayuki Goto, Nathan Dougherty, Bill Desjardin, David Sabo, Marko Mlinar and
Tomas Geurts
• 3. Photodiode Barrier Induced Lag Characterization Using a New Lag versus Idle Time
Methodology W. Gao, M. Guidash, N. Li, R. Ispasoiu, P. R. Ailuri, N. Palaniappan, D. Tekleab,
M. Rahman. ON Semiconductor, CA, USA