地点：美国奥斯汀

*1.12um pixel development with TSMC 65nm BSI process – 48M Sensor Product
*Achieved low noise ~1.4e(@8X) with single oxide and buried channel (TSMC suggested 3e)

*Achieved low dark current <3e(TSMC is suggested spec. is <15e)

*采用台积电65nm BSI工艺开发1.12微米像素–48M传感器产品
* 通过单氧化物和掩埋沟道实现了低噪声~1.4e（@8X）（台积电建议3e）

*实现了小于3e的低暗电流（建议台积电规格小于15e）

* 28nm High Voltage Process foundry management (Global Foundry in Dresden)

* Supervising new 28nm project with Samsung Foundry as Supervisor

*28nm高压工艺铸造厂管理（德累斯顿全球铸造厂）
*由三星Foundry担任监督人，监督新的28nm项目

*Expand product line up including new specialty gas(WF6 and N2O) and precursor for ALD process.

*Find a manufacturing company to get technology license and joint development.

*Report Head of business unit of Neochem.

*Lead two team (New Business Development Team and Production Technology Team)

*扩大产品线，包括新的特种气体（WF6和N2O）和ALD工艺的前体。
*寻找一家制造公司来获得技术许可和联合开发。
*报告Neochem业务部门负责人。
*领导两个团队（新业务开发团队和生产技术团队）

*Expert of Low noise and high-performance CMOS image sensor (Pixel) development

*Oversee and maintain efficient project management operations by directing and monitoring activities of development team consisting of 34 engineers skilled in pixel, process integration and simulation. Also led development group of pixel (2.8um to 1.0um) with advanced SoC process (130nm to 28nm).

*As a PIE technology leader, cover a whole semiconductor manufacturing process from selection of materials, chemicals and process to packing.

*As a PIE technology, lead unit process engineer (wet chemical, dry etch, CVD deposition, implantation andphoto engineer) for developing process and product.

*Report Head of business unit(EVP) and Team Leader(SVP)

*低噪声和高性能CMOS图像传感器（像素）开发专家
*通过指导和监督由34名精通像素、过程集成和模拟的工程师组成的开发团队的活动，监督和维护高效的项目管理操作。还领导了具有先进SoC工艺（130nm至28nm）的像素（2.8um至1.0um）开发小组。
*作为PIE技术的领导者，涵盖从材料选择、化学品和工艺到包装的整个半导体制造过程。
*作为PIE技术的领导者，负责开发工艺和产品的领导单位工艺工程师（湿法化学、干法蚀刻、CVD沉积、注入和照相工程师）。
*报告业务部门负责人（EVP）和团队负责人（SVP）

执行副总惨&首席技术官

项目：0.13um eDRAM，带MIM电容器和eFlash开发（1999.3–2001.8）
在2001年的电化学学会上发表了研究结果。