My main job is pixel design. I’m currently developing around 1.xxum pixel pitch for front camera of mobile phone.

I hope you understand that I can’t give you more detailed information about my jobs because I have an obligation to keep a secret.

My first task was the development of 1.12um pixels. While working on that, I improved on the S5K6A2 for Apple, which through my work is now rated the world’s best performer. I was a Pixel Simulation Leader, directly because of my work on the S5K6A2. My second task was the development of high speed pixel readout circuit for 120fps and above FHD 960fps.

I developed new pixel level simulation bench including analog readout circuit and pixel level transistor model.

My third task was the development of low noise pixel source follower transistor and analog device. I have achieved 28nm analog device in order to improve CFPN characterization and it was patented. Because of this achievement realized not only CIS business using 28nm process node but also high frame rate for analog circuit. And blooming control by sequentially pixel readout method was patented too.

1. In order to improve the FWC for the S5K6A2, I again used a new method, which improved performance by 30%, without sacrificing pixel integrity, which had been the problem in the past. This improvement is why the S5K6A2 is considered the world’s best. I received an innovation award from Samsung for my work.
2. I developed a new method to improve performance in the S5K2P1 chip. This method raised FWC performance by 20% and lowered Cross-talk by 3%.
3. I developed new type 1.12um pixel through developing a new method of PD generation.
4. I developed new pixel readout sequence for suppress blooming from PD to FD.
5. In order to improve CFPN noise, especially degradation of CFPN using 28nm analog circuits, it was evaluated and find out root cause of CFPN. By this achievement it was able to CIS business of Galaxy S7, S7 note, S8 and expanded Chinese market share.
6. I have made FDK(or PDK) evaluation metrics for external foundry selection and also developed the TEG module design methodology. Finally, the correlation of between FDK model and hardware had evaluated and confirmed.
7. I developed the custom process and device including layout design rule for analog circuit (such as OTA) to get low power and low noise performance using external foundry. And for external foundry, I set up the noise measurement methodology and surface trap density(Dit) methodology

My main job was pixel design. I developed the IMX029 and IMX034 chips. They were designed with a 1.75um pixel pitch CMOS image sensor for mobile applications. This pixel pitch was produced in the Kumamoto factory. These were produced by 12”Cu process. And the IMX088, ISX005 and ISX006 chips were designed with a 1.4um pixel pitch. The IMX088 was the first SONY product sold to NOKIA. It was the first achievement for SONY’s image sensor department. The ISX005 and ISX006 were developed for the expanding mobile market share. At the request of the Vice-President, my last task was the development of high-end 4k2k pixels for digital cinema including Broadcast and high-end consumer products by:

1. New ion implant methods were used to improve dark currents and LAG performance in the IMX029 and IMX034. The new ion implant method was achieved without degradation of pixel performance. Wafer yield was dramatically improved by the new ion implant method as well. I received an award for my ingenuity from the company for my usage of this method.
2. NOKIA requested SONY get the SNR10 under 110lux. In order to do this, I created a new method of PD (Photo Diode) to PD (Photo Diode) isolation which reinforced Low Cross-talk performance and improved QE to more than 6%. This guaranteed NOKIA business for SONY. The product code is IMX088.
3. I developed a new approach to more cheaply produce ISX006 and ISX005 pixels. This new approach shortened the production by 10 steps, while improving pixel quality rather than degrading, which was the main hindrance to cheaper production. This approach was patented and I received another award for my new method.
4. The Vice-President of SONY requested the development of 4k2k IMX110 for digital cinema including Broadcast and high-end consumer products. In order to achieve a high-frame rate, I designed a new pixel layout and architecture.
5. Using the test vehicle, I developed a non-STI pixel with 1.12um pixel pitch to achieve low dark current, low noise and high FWC.
6. While at SONY, much of my work with pixels was patented.